Method for Programming A Resistive Memory Cell, A Method And A Memory Apparatus For Programming One Or More Resistive Memory Cells In A Memory Array

ABSTRACT

A method for programming a resistive memory cell is provided. The method may include providing a programming signal to the resistive memory cell. The programming signal may include an electrical pulse and a bias pulse coupled with the electrical pulse. The electrical pulse includes an electrical pulse portion, and the bias pulse includes at least two bias pulse portions, wherein the electrical pulse portion is positioned between the at least two bias pulse portions. The bias pulse includes a voltage below a threshold switching voltage of the resistive memory cell. The programming signal includes a peak voltage above the threshold switching voltage of the resistive memory cell.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority from Singapore provisional patentapplication number 201102276-1, filed 30 Mar. 2011, the content of itbeing hereby incorporated by reference in its entirety for all purposes.

TECHNICAL FIELD

Various embodiments relate to methods and a memory apparatus. In variousembodiments, the method is for programming a resistive memory cell. Invarious embodiments, the method and the memory apparatus are forprogramming one or more resistive memory cells in a resistive memoryarray.

BACKGROUND

Phase Change Random Access Memory (PCRAM) is considered as one of theleading contenders for the next generation nonvolatile semiconductormemory technologies due to its competitive advantages of speed, powersaving, capacity, reliability, process integration and low cost.

PCRAM relies primarily on phase-change materials to store information.Such information can be written via the transformation of the materialsbetween the amorphous and crystalline states and retrieved by sensingtheir difference in resistivity.

Transformation mechanisms involve the melting and quenching of thematerials to the amorphous state and the heating of the materials atlower temperatures to the crystalline state.

SUMMARY

Various embodiments provide a method for programming a resistive memorycell, the method including providing a programming signal to theresistive memory cell, the programming signal including an electricalpulse, and a bias pulse coupled with the electrical pulse; wherein theelectrical pulse includes an electrical pulse portion, and the biaspulse includes at least two bias pulse portions, the electrical pulseportion being positioned between the at least two bias pulse portions,wherein the bias pulse includes a voltage below a threshold switchingvoltage of the resistive memory cell, and wherein the programming signalincludes a peak voltage above the threshold switching voltage of theresistive memory cell.

Various embodiments provide a method for programming one or moreresistive memory cells in a resistive memory array, the method includingproviding a programming signal to the one or more resistive memorycells, the programming signal including an electrical pulse, and a biaspulse coupled with the electrical pulse; wherein the electrical pulseincludes an electrical pulse portion, and the bias pulse includes atleast two bias pulse portions, the electrical pulse portion beingpositioned between the at least two bias pulse portions, wherein thebias pulse includes a voltage below a threshold switching voltage of theone or more resistive memory cells, and wherein the programming signalincludes a peak voltage above the threshold switching voltage of the oneor more resistive memory cells.

Various embodiments provide a method for programming a resistive memorycell, the method including providing a programming signal to theresistive memory cell, the programming signal including an electricalpulse portion, and at least two bias pulse portions, the electricalpulse portion being positioned between the at least two bias pulseportions; wherein each of the at least two bias pulse portions includesa respective voltage below a threshold switching voltage of theresistive memory cell, and wherein the programming signal includes apeak voltage above the threshold switching voltage of the resistivememory cell.

Various embodiments provide a memory apparatus including a memory array,the memory array including one or more resistive memory cells; and aprogramming circuit coupled with the one or more resistive memory cellsand configured in use to provide a programming signal to the one or moreresistive memory cells to program the one or more resistive memorycells, the programming signal including an electrical pulse, and a biaspulse coupled with the electrical pulse; wherein the electrical pulseincludes an electrical pulse portion, and the bias pulse includes atleast two bias pulse portions, the electrical pulse portion beingpositioned between the at least two bias pulse portions, wherein thebias pulse includes a voltage below a threshold switching voltage of theone or more resistive memory cells, and wherein the programming signalincludes a peak voltage above the threshold switching voltage of the oneor more resistive memory cells.

Various embodiments provide a memory apparatus including a memory array,the memory array including one or more resistive memory cells; and aprogramming circuit coupled with the one or more resistive memory cellsand configured in use to provide a programming signal to the one or moreresistive memory cells to program the one or more resistive memorycells, the programming signal including an electrical pulse portion, andat least two bias pulse portions, the electrical pulse portion beingpositioned between the at least two bias pulse portions; wherein each ofthe at least two bias pulse portions includes a respective voltage belowa threshold switching voltage of the one or more resistive memory cells,and wherein the programming signal includes a peak voltage above thethreshold switching voltage of the one or more resistive memory cells.

BRIEF DESCRIPTION OF THE DRAWINGS

In the drawings, like reference characters generally refer to like partsthroughout the different views. The drawings are not necessarily toscale, emphasis instead generally being placed upon illustrating theprinciples of some example embodiments of the invention. In thefollowing description, various example embodiments of the invention aredescribed with reference to the following drawings, in which:

FIG. 1 shows an electrical pulse and a bias pulse included in a SETpulse according to an embodiment.

FIG. 2 shows a SET pulse for single level programming according to anembodiment.

FIG. 3 shows the relation between PCRAM resistance and electrical pulsewidth at different bias voltages according to an embodiment.

FIG. 4 shows the relation between PCRAM resistance and applied voltageat different bias voltages according to an embodiment.

FIG. 5 shows a SET pulse for multilevel programming according to anembodiment.

FIG. 6 shows the correlation between PCRAM resistance states and biasvoltage according to an embodiment.

FIG. 7 shows a multilevel programming cycle according to an embodiment.

FIG. 8 shows a schematic diagram of a portion of a phase change memoryarray integrating with IC switches according to an embodiment.

FIG. 9 shows a block diagram of a phase change memory IC for memory chipimplementation according to an embodiment.

DETAILED DESCRIPTION

The following detailed description refers to the accompanying drawingsthat show, by way of illustration, specific details and embodiments inwhich the invention may be practised. These embodiments are described insufficient detail to enable those skilled in the art to practice theinvention. Other embodiments may be utilized and structural, logical,and electrical changes may be made without departing from the scope ofthe invention. The various embodiments are not necessarily mutuallyexclusive, as some embodiments can be combined with one or more otherembodiments to form new embodiments.

In a Phase Change Random Access Memory (PCRAM), the contrast between theamorphous and crystalline states is determined mainly by the ability ofthe phase-change material to crystallize to the lowest resistance level,also referred to as a SET state; and to amorphize to the highestresistance level, also referred to as a RESET state. Although thefollowing implementations are illustrated using a PCRAM as an example,it should be noted that the embodiments may also be provided in otherimplementations of a resistive memory cell such as e.g. a ConductiveBridging Random Access Memory (CBRAM) or a Magnetoresistive RandomAccess Memory (MRAM) or any other type of resistive memory technology.

Various embodiments provide a method for programming a resistive memorycell, the method including providing a programming signal to theresistive memory cell, the programming signal including an electricalpulse, and a bias pulse coupled with the electrical pulse; wherein theelectrical pulse includes an electrical pulse portion, and the biaspulse includes at least two bias pulse portions, the electrical pulseportion being positioned between the at least two bias pulse portions,wherein the bias pulse includes a voltage below a threshold switchingvoltage of the resistive memory cell, and wherein the programming signalincludes a peak voltage above the threshold switching voltage of theresistive memory cell.

In an embodiment, the resistive memory cell includes a phase changememory cell.

In an embodiment, the programming signal reduces the resistance of theresistive memory cell to a level corresponding to a SET state of theresistive memory cell.

In an embodiment, the threshold switching voltage is in the range fromabout 0.3 V to about 2 V.

In an embodiment, the threshold switching voltage is in the range fromabout 0.4 V to about 1 V.

In an embodiment, the threshold switching voltage is in the range fromabout 0.6 V to about 0.8 V.

In an embodiment, the duration of the bias pulse is longer than theduration of the electrical pulse

In an embodiment, the duration of the bias pulse is in the range ofnanoseconds to microseconds.

In an embodiment, the duration of the electrical pulse is in the rangefrom about 10 nanoseconds to about 1 microsecond.

In an embodiment, the duration of the electrical pulse is in the rangefrom about 1 nanosecond to about 100 nanoseconds.

In an embodiment, the resistive memory cell is a binary memory cell.

In an embodiment, the resistive memory cell is a multilevel memory cell.As used herein the term “multilevel” memory cell is intended to e.g.,include memory cells which are configured to store a plurality of bitsby showing distinguishable voltage or current levels dependent on theamount of electric charge stored in the memory cell or the amount ofelectric current flowing through the memory cell, thereby representing aplurality of logic states.

In an embodiment, the resistive memory cell is a multibit memory cell.As used herein the term “multibit” memory cell is intended to e.g.include memory cells which are configured to store a plurality of bitsby spatially separated electric charge storage regions or currentconductivity regions, thereby representing a plurality of logic states.

In an embodiment, a first programming signal is provided for programmingthe multilevel memory cell in a first resistance level, and a secondprogramming signal is provided for programming the multilevel memorycell in a second resistance level, wherein the first resistance level isdifferent from the second resistance level.

In an embodiment, the first resistance level and the second resistancelevel are different from a lowest resistance level of the multilevelmemory cell, wherein the lowest resistance level corresponds to a SETstate of the multilevel memory cell.

In an embodiment, depending on the resistance level of the multilevelmemory cell, various programming signals are provided for programmingthe multilevel memory cell, the various programming signals varying inone or more of the following: voltage of the bias pulse, the peakvoltage of the programming signal, the duration of the bias pulse, theduration of the electrical pulse.

Various embodiments provide a method for programming one or moreresistive memory cells in a resistive memory array, the method includingproviding a programming signal to the one or more resistive memorycells, the programming signal including an electrical pulse, and a biaspulse coupled with the electrical pulse; wherein the electrical pulseincludes an electrical pulse portion, and the bias pulse includes atleast two bias pulse portions, the electrical pulse portion beingpositioned between the at least two bias pulse portions, wherein thebias pulse includes a voltage below a threshold switching voltage of theone or more resistive memory cells, and wherein the programming signalincludes a peak voltage above the threshold switching voltage of the oneor more resistive memory cells.

In an embodiment, the one or more resistive memory cells include one ormore phase change memory cells.

The further features described with reference to the first method areequally applicable, and hereby restated, in respect of the above method.

Various embodiments provide a method for programming a resistive memorycell, the method including providing a programming signal to theresistive memory cell, the programming signal including an electricalpulse portion, and at least two bias pulse portions, the electricalpulse portion being positioned between the at least two bias pulseportions; wherein each of the at least two bias pulse portions includesa respective voltage below a threshold switching voltage of theresistive memory cell, and wherein the programming signal includes apeak voltage above the threshold switching voltage of the resistivememory cell.

The further features described with reference to the first method areequally applicable, and hereby restated, in respect of the above method.

Various embodiments provide a memory apparatus including a memory array,the memory array including one or more resistive memory cells; and aprogramming circuit coupled with the one or more resistive memory cellsand configured in use to provide a programming signal to the one or moreresistive memory cells to program the one or more resistive memorycells, the programming signal including an electrical pulse, and a biaspulse coupled with the electrical pulse; wherein the electrical pulseincludes an electrical pulse portion, and the bias pulse includes atleast two bias pulse portions, the electrical pulse portion beingpositioned between the at least two bias pulse portions, wherein thebias pulse includes a voltage below a threshold switching voltage of theone or more resistive memory cells, and wherein the programming signalincludes a peak voltage above the threshold switching voltage of the oneor more resistive memory cells.

In an embodiment, the one or more resistive memory cells included in thememory apparatus include one or more phase change memory cells.

The further features described with reference to the first method areequally applicable, and hereby restated, in respect of the aboveapparatus.

Various embodiments provide a memory apparatus including a memory array,the memory array including one or more resistive memory cells; and aprogramming circuit coupled with the one or more resistive memory cellsand configured in use to provide a programming signal to the one or moreresistive memory cells to program the one or more resistive memorycells, the programming signal including an electrical pulse portion, andat least two bias pulse portions, the electrical pulse portion beingpositioned between the at least two bias pulse portions; wherein each ofthe at least two bias pulse portions includes a respective voltage belowa threshold switching voltage of the one or more resistive memory cells,and wherein the programming signal includes a peak voltage above thethreshold switching voltage of the one or more resistive memory cells.

In an embodiment, the one or more resistive memory cells included in thememory apparatus include one or more phase change memory cells.

The further features described with reference to the first method areequally applicable, and hereby restated, in respect of the aboveapparatus.

Phase-change random access memory (PCRAM) is a leading contender fornext-generation nonvolatile semiconductor memory technologies. Thecompetitive advantages of PCRAM include, but are not limited to, higheroperating speed, lower power consumption, higher storage capacity,greater reliability, better process integration and lower manufacturingcost.

PCRAM may include a phase-change memory array that includes a pluralityof phase-change memory cells. Each cell of the plurality of phase-changememory cells may store data. Being a nonvolatile memory device, eachphase-change memory cell may retain its data even when no power issupplied to it. A new data value may be written into a phase-changememory cell, thus replacing the previous data value. Accordingly, thedata value stored in a phase-change memory cell may be intentionallychanged by a user. Further, the data value stored in each phase-changememory cell may be retrieved or read without changing, disturbing, orcompromising the data value stored in the cell.

The ability to write, store, and retrieve information in eachphase-change memory cell may be provided by phase-change materials, suchas, for example, a chalcogenide alloy of germanium, antimony andtellurium (GST). Phase-change materials may possess two or moredifferent structural states, i.e., a plurality of structural states. Theplurality of states of a phase-change material may be distinguished onthe basis of different crystal structures, atomic arrangements,fractional crystallinities, relative proportions of two or moredifferent structural states, physical properties (such as, for example,electrical, optical, magnetic, mechanical), or chemical properties. Someof these distinguishing features will be discussed in more detail later.

A phase-change material may possess a plurality of structural statesthat may include a crystalline state and/or one or morepartially-crystalline states and/or an amorphous state. The crystallinestate of a phase-change material may include a single-crystalline stateor a polycrystalline state. The partially-crystalline state of aphase-change material may be a structural state in which a portion ofthe phase-change material may be in the amorphous state whilst,simultaneously, another portion of the same phase-change material may bein the crystalline state. The ratio of the volume fraction of thephase-change material in the crystalline state to the volume fraction ofthe same phase-change material in the amorphous state, expressed as apercentage, may be referred to as the fractional crystallinity of aphase-change material. For example, the fractional crystallinity of aphase-change material in the fully crystalline state may be 100%, thefractional crystallinity of a phase-change material in the fullyamorphous state may be 0%, and the fractional crystallinity of aphase-change material in the partially crystalline state may be anyvalue between 0% (fully amorphous) and 100% (fully crystalline), suchas, for example, any value between 0% and 100%, or between 10% and 90%,or between 20% and 80%, or between 30% and 70%, or between 40% and 60%.

A phase-change material may also possess a plurality ofpartially-crystalline states. Each state of the plurality ofpartially-crystalline states may also be distinguished on the basis ofits fractional crystallinity. For example, the fractional crystallinityof each state of the plurality of partially-crystalline states may varycontinuously between 0% (fully amorphous) and 100% (fully crystalline).Consequently, the plurality of states of a phase-change material may bedistinguished on the basis of their fractional crystallinities.

The physical properties of a phase-change material may vary with itsfractional crystallinity. Stated differently, the physical properties ofa phase-change material may change with its structural state. Thephysical properties of a phase-change material may be measurableproperties, such as, for example, resistance, magnetic permeability,refractive index, or electrical susceptibility. Consequently, numbersobtained from measuring the physical properties of a phase-changematerial may be associated with each state of the plurality ofstructural states of the phase-change material.

The resistance of a phase-change material may vary with its state.Accordingly, a resistance value may be associated with each state of theplurality of structural states of the phase-change material. Further,each structural state of a phase-change material may be associated witha distinct, unique resistance value. Accordingly, the plurality ofstructural states of a phase-change material may also be distinguishedon the basis of the resistance of a phase-change material. Consequently,structural states of a phase-change material may also be referred to asresistance states of a phase-change material.

A phase-change material may be able to reversibly transformation betweenor among the plurality of structural states. Accordingly, a phase-changematerial may be able to change its resistance in accordance with itsstructural state. Therefore, controlling the resistance of aphase-change material may be achieved through controlling the structuralstate of the phase-change material. Stated differently, the resistanceof a phase-change material may be varied by controlling its fractionalcrystallinity. Typically, the crystalline state of a phase-changematerial, i.e., fractional crystallinity of 100%, may have the lowestresistance, while the amorphous state of a phase-change material, i.e.,fractional crystallinity of 0%, may have the highest resistance.

Transformations between or among the plurality of structural states maybe effected by providing energy to the phase-change material. The energyprovided to a phase-change material to transform its state between oramong its plurality of structural states may be electrical energy,thermal energy, optical energy, or other forms of energy.

Thermal energy provided to the phase-change material may transform thestructural state of a phase-change material. For example, thecrystalline state of a phase-change material may be transformed bythermal energy to a partially-crystalline state or an amorphous state.Similarly, the partially-crystalline state of a phase-change materialmay be transformed by thermal energy to a crystalline state, anamorphous state or a different partially-crystalline state. In likemanner, the amorphous state of a phase-change material may betransformed by thermal energy to a partially-crystalline state or acrystalline state.

A phase-change material in a partially-crystalline state or in thecrystalline state may be transformed to its amorphous state by heatingthe phase-change material above its melting temperature and rapidlycooling the phase-change material. Rapidly cooling the phase-changematerial may include a cooling rate that is sufficient to inhibit theformation of a regular arrangement of crystals in a phase-changematerial. This rapid cooling of a phase-change material may also bereferred to as quenching, and may result in a highly irregulararrangement of atoms in the phase-change material, thus yielding itsamorphous state.

A phase-change material in the amorphous state or in apartially-crystalline state may be transformed to the crystalline stateby heating the phase-change material above its crystallizationtemperature for a sufficient period of time to induce nucleation andgrowth of crystalline domains while preventing quenching of thephase-change material. The crystallization temperature is the minimumtemperature at which crystallization in a material may occur, and thecrystallization temperature is below the melting temperature.

The fractional crystallinity of a phase-change material, and hence, itsstructural state, may be controlled by varying the temperature and/ortime of heating and/or rate of cooling of the phase-change material.Accordingly, proper control of the peak temperature and/or time ofheating and/or rate of cooling may achieve structural states of aphase-change material that span the full range of fractionalcrystallinities in a phase-change material, namely, from 0% fractionalcrystallinity (amorphous state) to 100% fractional crystallinity(crystalline state), inclusive.

Electrical energy may be converted to thermal energy in order totransform the state of a phase-change material. The electrical energymay be provided by electrical pulses applied to the phase-changematerial in each phase-change memory cell. The electrical pulse mayinclude a current pulse or a voltage pulse. The electrical energy of anelectrical pulse may be converted to thermal energy by Joule heating,namely, the conversion of electrical energy to thermal energy throughresistance to current flow. The resistance to current flow may generateheat, which may lead to an increase in the temperature of thephase-change material. The heat generated by Joule heating, and hence,temperature of the phase-change material, may be controlled by varyingthe time duration and/or amplitude of the voltage pulse or the currentpulse.

More insight into Joule heating may be gained by considering thefollowing. The crystalline portions of a phase-change material, having aregular atomic arrangement, may be sufficiently conductive to permitcurrent densities that provide efficient Joule heating. Conversely, theamorphous portions, having a highly irregular atomic arrangement, may beless conductive and may not support current densities sufficient to heatthe material to the crystallization temperature. However, amorphousportions of a phase-change material may be electrically switched tobecome highly conductive upon application of a voltage greater than athreshold switching voltage. When this occurs, the amorphous portions ofa phase-change material may support a current density high enough toheat the material to the crystallization temperature through Jouleheating. This may also be referred to as a threshold switching event.When the applied voltage equals or exceeds the threshold switchingvoltage, the amorphous portions of a phase-change material become highlyconductive almost instantaneously. The threshold switching voltage mayvary depending on the structure, the thickness, and/or the phase-changematerial in the phase-change memory cell.

Once the amorphous portions of a phase-change material become highlyconductive, these volume fractions may undergo nucleation and growth ofa crystalline phase. This process may take a relatively short amount oftime. Therefore, by controlling the amplitude and/or time duration ofelectrical pulses applied to a phase-change material, it may be possibleto continuously the fractional crystallinity of a phase-change material.Once formed, the crystalline phase is retained upon removing the appliedvoltage after switching due to the non-volatile nature of phase-changememory cells.

The electrical energy applied to a phase-change material may transformits structural state, and thus, its resistance. Writing data into aphase-change memory cell, or a programming operation, may includeapplying a voltage pulse or a current pulse to a phase-change materialto transform its structural state from one state to another, thuschanging its resistance from one resistance value to another. Eachresistance value may correspond to a unique data value.

The data value stored in each phase-change memory cell may be retrievedby measuring the resistance of the phase-change material within thecell. Retrieving information from a phase-change memory cell, or a readoperation, may be achieved by providing a current pulse or a voltagepulse to measure the resistance of the phase-change material, and thus,ascertain the data value programmed into the phase-change memory cell.The energy of the read pulse may be sufficiently low to prevent anytransformation of the structural state of the phase-change material.Accordingly, read operations may be performed without changing,disturbing, or compromising the data value stored in the cell.

Data may be programmed into a phase-change memory cell in binary mode,namely, the data value may be one of two logical states. These twological states are commonly known as the binary “0” and the binary “1”states. In the binary mode, the phase-change material within eachphase-change memory cell included in a phase-change memory array may beoperated between two structural states. A first state may be designatedthe data value “1” and a second state may be designated the data value“0”. Alternatively, the first state may be designated the data value “0”and the second state may be designated the data value “1”. In order toimprove the ability to discriminate between the two data values, the twostructural states (or resistance states) may be selected to provide alarge contrast of resistance values.

The range of resistance values of a phase-change material may be boundedby a SET state associated with a SET resistance, and a RESET stateassociated with a RESET resistance. The SET state may be associated withthe lowest resistance of a phase-change material. Accordingly, the SETstate may be associated with the crystalline state of a phase-changematerial. Similarly, the RESET state may be associated with the highestresistance of a phase-change material. Accordingly, the RESET state maybe associated with the amorphous state of a phase-change material. Inorder to provide a large contrast of resistance values, the resistanceof the RESET state may be at least a factor of two, and more typicallyan order of magnitude or more, greater than the resistance of the SETstate. The SET state may be associated with the binary “0” state, andthe RESET state may be associated with the binary “1” state.Alternatively, the SET state may be associated with the binary “1”state, and the RESET state may be associated with the binary “0” state.

In a binary programming operation, a phase-change material may beprogrammed from the SET state to the RESET state. Therefore, aphase-change material in the crystalline state may be heated to itsmelting point or near its melting point. The melted phase-changematerial may then be quenched so that it is transformed to the highestresistance amorphous state (RESET state). The programming of thephase-change material to the RESET state may be referred to as a RESETprocess.

In a binary programming operation, a phase-change material may beprogrammed from the RESET state to the SET state. Therefore, aphase-change material in the amorphous phase may be heated to itscrystallization temperature or near its crystallization temperature (butbelow its melting temperature). This may induce nucleation andcrystallization in the phase-change material, thus transforming thephase-change material to the lowest resistance crystalline state (SETstate). The programming of the phase-change material to the SET statemay be referred to as a SET process.

In a binary programming operation, a phase-change material starting inthe SET state may undergo repeated transformations between the SET andRESET states. Similarly, a phase-change material starting in the RESETstate may undergo repeated transformations between the RESET and SETstates. Each of these binary programming operations may be referred toas a SET/RESET cycle.

The resistance state of each phase-change memory cell may drift overtime even if no energy is applied to the phase-change material tointentionally transform its state. Stated differently, the resistance ofa phase-change material may change over time even if no programmingoperation is performed. This may be referred to as resistance drift.Illustratively, if a phase-change memory cell is programmed into aparticular structural state having a unique resistance at one time, theresistance of the cell may be different if measured at a later time.Accordingly, data may be misread during a read operation. As is commonlythe case, resistance of a phase-change material increases with time andmay become more pronounced as the amorphous volume fraction of astructural state increases. Stated differently, resistance drift is abigger problem with the RESET state, and less of a problem with the SETstate.

Resistance drift may require the phase-change material to bere-initialized to the SET state after a high number of SET/RESET cycles.Further, due to tolerances typically present in any manufacturingprocess, phase-change materials in the phase-change cells included inPCRAM may have different initial resistances. Accordingly, newlymanufactured PCRAM may also require initialization to the SET statebefore the first programming operation. Initialization orre-initialization may also be referred to as area erase or block erase.

Whilst the above-mentioned processes may be easy to understand,difficulties exist in the SET process. Due to the high operating speedsof modern day PCRAM, crystallization may have to be induced within ashort time period. Accordingly, this neccesitates the use of a smallvoltage window, namely, short time duration, high amplitude electricalpulses. The small voltage window may place severe limitations on theprecise voltage amplitude and pulse duration required to switchphase-change cells to the lowest resistance level. Errors in voltageamplitude and pulse duration during the SET process may lead to onlypartial crystallization of the phase-change material. This may lead tovarying resistance states amongst the phase-change cells of PCRAM.Further, errors in voltage amplitude and pulse duration during the SETprocess may lead to re-amorphization of the phase-change cells, insteadof crystallization. These issues in the SET process state also makes itdifficult to sense the lowest resistance state of the cells when a readoperation is performed. Additionally, a phase-change memory arraywherein each phase-change memory cell has a different SET state may alsoresult in non-uniformed RESET voltage and resistance levels.

Difficulties may also exist in the initialization or re-initializationof the phase-change cell. Initialization of the phase-change cell aretypically induced by high amplitude current or voltage pulses that havelong time durations. This may be due to the high activation energy ofas-deposited phase-change material and the wide variations in theinitial cell resistance levels.

One method of resolving these issues may be through the initializationof the cells by employing electrical pulses with higher voltages orlonger time durations than a conventional SET pulse, i.e., the voltagepulse used in the SET process. However, the effectiveness of this methodis limited by the time duration within which crystallization andre-amorphization have to occur in modern day PCRAM.

Another method of solving these issues may be through a program control.In this case, a memory controller may first read the resistance level ofall phase-change memory cells, and may subsequently generate acorresponding SET pulse to set each cells to the lowest resistancestate. However, this may increase the complexity of the memory array.This may also increase the power consumption and switching speed of thephase-change memory cells.

Hence, there is a need to develop programming methods to effectivelyswitch the PCRAM from various high resistance levels to the desired SETresistance levels and to achieve good resistance uniformity within ashort time duration. Block or area erase of phase-change memory cellsoperating in the binary mode may be referred to as single levelprogramming.

Applying a low bias before and after an electrical pulse may achievecrystallization of a phase-change material to the lowest resistancelevel. In an embodiment, a low bias voltage pulse may be a DC pulse. Alow bias voltage may induce the phase-change material in a phase-changememory cell to reach low temperatures that promote nucleation. In thiscontext, low temperature refers to any temperature below thecrystallization temperature. Such a low bias voltage pulse may enablefast crystal growth when a short time duration, high voltage electricalpulse above the threshold switching voltage is applied. Consequently,this may lead to a complete crystallization of the material within thepulse duration. A low bias voltage pulse applied after a short timeduration, high voltage electrical pulse may prevent quenching of aphase-change material, while promoting the stabilization of the newlyformed crystalline structural state.

FIG. 1 shows an electrical pulse 101 and a bias pulse 103 included in aSET pulse according to an embodiment. The shapes of the electrical pulse101 and the bias pulse 103 are illustrative and not intended to belimiting. Time increases along a horizontal axis 102 and voltageincreases along a vertical axis 104. In an embodiment, the SET pulse mayinclude be a single electrical pulse 101 coupled with a DC bias pulse103. In an embodiment, a SET pulse may include the electrical pulse 101and a bias pulse 103. In an embodiment, the bias pulse may include atleast two bias pulse portions 103 a, 103 b. In an embodiment, theelectrical pulse portion 101 may be positioned between the at least twobias pulse portions 103 a, 103 b. In an embodiment, the bias pulse 103may include a voltage V_(B) below the threshold switching voltage of aphase change memory cell. In an embodiment, the electrical pulse 101 mayinclude a peak voltage V_(E) above the threshold switching voltage of aphase change memory cell.

FIG. 2 shows a SET pulse 200 for single level programming according toan embodiment. The shape of the SET pulse 200 is illustrative and notintended to be limiting. Time increases along a horizontal axis 202 andvoltage increases along a vertical axis 204. In an embodiment, the SETpulse may include a low-high-low configuration. A first segment of thelow-high-low configuration may achieve fast nucleation. A second segmentof the low-high-low configuration may achieve crystal growth. A thirdsegment of the low-high-low configuration may prevent quenching whilstachieving stabilization of the phase-change material.

In an embodiment, the SET pulse 200 may include an electrical pulse anda bias pulse coupled to the electrical pulse. In an embodiment, aninitial leading edge 220 followed by a plateau 221 of time duration T₁.In an embodiment, the amplitude of plateau 221 may be less than thethreshold switching voltage V_(TH) of the phase-change material. In anembodiment, the threshold switching voltage V_(TH) may be in the rangeof 0.3 V to 2 V. In another embodiment, the threshold switching voltagemay be in the range of 0.4 V to 1 V. In a further embodiment, thethreshold switching voltage may be in the range of 0.6 V to 0.8 V. In anembodiment, the amplitude of plateau 221 may be in the range of 0.1 V to0.3 V. In another embodiment, the amplitude of the plateau 221 may be inthe range 0.3 V to 0.4 V. In a further embodiment, the amplitude of theplateau 221 may be in the range 0.4 V to 0.5 V. In other embodiments,the amplitude of the plateau 221 may be another value below thethreshold switching voltage V_(TH) of the phase-change material includedin the phase-change memory cell.

In an embodiment, the voltage amplitude and time duration T₁ of plateau221 may result in the nucleation of the phase-change material andheating of the phase-change material to a temperature below thecrystallization temperature. As utilized herein, the crystallizationtemperature may also be referred to as the glass transition temperature.For phase-change materials such as Ge₂Sb₂Te₅, the glass transitiontemperature may be about 150° C. In an embodiment, the low temperatureheating of the phase-change material below the glass transitiontemperature during the pulse duration T₁ may result in the formation ofadsorbed monomers and nuclei within the phase-change material. Thesemonomers and nuclei may coalesce to form small islands. The timeduration T₁ of plateau 221 may be from several tens of nanoseconds to afew microseconds, or more, depending on phase-change material parameterssuch as, for example, dimensions of the phase-change memory cell, thecomposition of the chalcogenide alloy of the phase-change material, thethreshold switching voltage of the phase change memory cell, among otherthings. In an embodiment, the time duration T₁ may be in the range ofabout 20 nanoseconds to about 100 microseconds, or in the range of about30 nanoseconds to about 50 microseconds, or in the range of about 50nanoseconds to about 10 microseconds, or in the range of about 60nanoseconds to about 1 microsecond, or in the range of about 80nanoseconds to about 800 nanoseconds, or in the range of about 100nanoseconds to about 600 nanoseconds, or in the range of about 200nanoseconds to about 400 nanoseconds.

In an embodiment, the leading edge 222 and plateau 223 of time durationT₂ may result in the heating of the phase-change material to atemperature above the glass transition temperature. The amplitude ofplateau 223, including a peak voltage V_(P), may be greater than thethreshold switching voltage V_(TH) so that a threshold switching eventmay occur. In an embodiment, the peak amplitude V_(P) of the plateau 223may be a value above the threshold switching voltage V_(TH), such as,for example, a value in the range of 0.3 V to 10 V. In an embodiment,the peak amplitude V_(P) may be in the range of 1V to 9 V, or in therange of 2 V to 8 V, or in the range of 3 V to 7 V, or in the range of 4V to 6 V. In an embodiment, the heating of the phase-change material athigher temperatures during the pulse duration of plateau 223, i.e.,during T₂, may result in the rapid growth of monomers and nuclei, andfull crystallization of the phase-change material. This may result in asharp drop in the resistance level of the PCRAM in a short period oftime. In an embodiment, the time duration of the leading edge 222 may beless than ten nanoseconds, such as, for example, 1 ns to 10 ns, or 2 nsto 9 ns, or 3 ns to 8 ns, or 4 ns to 7 ns, or 5 ns to 6 ns. In anembodiment, the time duration T₂ of plateau 223 may be in the range of afew hundred picoseconds, a few nanoseconds, to more than a few hundredsof nanoseconds, depending on phase-change material parameters such as,for example, dimensions of the phase-change memory cell, the compositionof the chalcogenide alloy of the phase-change material, the thresholdswitching voltage of the phase change memory cell, among other things.In an embodiment, the time duration T₂ may be in the range of about 200picoseconds to about 1 microsecond, or in the range of about 400picoseconds to about 700 nanoseconds, or in the range of about 800picoseconds to about 500 nanoseconds, or in the range of about 1nanosecond to about 300 nanoseconds, or in the range of about 50nanoseconds to about 200 nanoseconds, or in the range of about 80nanoseconds to about 100 nanoseconds.

In an embodiment, the trailing/falling edge 224 brings the amplitude ofthe SET pulse 200 down to plateau 225. In an embodiment, the amplitudeof plateau 225 may have the same amplitude as plateau 221. In anembodiment another trailing/falling edge 226 brings the amplitude of theSET pulse 200 down to zero. In an embodiment, the amplitude of theplateau 225 may be different from the amplitude of the plateau 221. Inan embodiment, the plateau 225 of time duration T₃ may result in heatingof the phase-change material below the glass transition temperature. Inan embodiment, the time duration T₄ of the SET pulse 200 may range froma few tens of nanoseconds to a few milliseconds, or more, depending onphase-change material parameters such as, for example, dimensions of thephase-change memory cell, the composition of the chalcogenide alloy ofthe phase-change material, the threshold switching voltage of the phasechange memory cell, among other things. In an embodiment, the timeduration T₄ may be in the range of about 20 nanoseconds to about 50milliseconds, or in the range of about 50 nanoseconds to about 20milliseconds, or in the range of about nanoseconds to about 10milliseconds, or in the range of about 100 nanoseconds to about 1millisecond, or in the range of about 500 nanoseconds to about 800microseconds, or in the range of about 800 nanoseconds to about 500microseconds, or in the range of about 1 microsecond to about 400microseconds, or in the range of about 100 microseconds to about 300microseconds.

In an embodiment, the two portions of a bias pulse of the programmingsignal may include plateau 221 and plateau 225. In an embodiment, theelectrical pulse portion of the programming signal may include theleading edge 222, the plateau 223, and the trailing/falling edge 224. Inan embodiment, the subsequent low temperature heating of thephase-change material during plateau 225 for time duration T3 may resultin the stabilization of the phase-change material and the prevention ofquenching of the phase-change material. In an embodiment, plateau 225may result in the fully crystalline state of the phase-change material.Electrical pulses with higher voltages may result in overheating of thephase change materials. Further, sudden removal of these higher voltagesmay result in re-amorphization of the phase-change material.Accordingly, the low temperature heating by the low voltage bias 225 mayalso avoid these problems. Accordingly, low power initialization ofphase-change materials may be achievable. The duration of plateau 225,i.e., time duration T3, may be from a few tens nanoseconds to a fewmicroseconds, or more depending on phase-change material parameters suchas, for example, dimensions of the phase-change memory cell, thecomposition of the chalcogenide alloy of the phase-change material, thethreshold switching voltage of the phase change memory cell, among otherthings. In an embodiment, the time duration T3 may be in the range ofabout 20 nanoseconds to about 100 microseconds, or in the range of about30 nanoseconds to about 50 microseconds, or in the range of aboutnanoseconds to about 10 microseconds, or in the range of about 60nanoseconds to about 1 microsecond, or in the range of about 100nanoseconds to about 900 nanoseconds, or in the range of about 300nanoseconds to about 700 nanoseconds, or in the range of about 400nanoseconds to about 600 nanoseconds. In an embodiment, variations inthe pulse profiles may be employed for different device applications.

FIG. 3 shows the relation between PCRAM resistance and electrical pulsewidth at different bias voltages according to an embodiment. The shapeof the curves is illustrative and not intended to be limiting.Electrical pulse width, measured as time duration, increases along ahorizontal axis 302 and resistance increases along a vertical axis 304.To achieve a SET resistance R, a conventional SET pulse including anelectrical pulse, but not including a bias voltage, may require a pulsewidth W1. In an embodiment, a SET pulse may include a low bias voltagecoupled with an electrical pulse. In an embodiment, the pulse width ofthe SET pulse including a low bias voltage coupled with an electricalpulse may have a pulse width W2. In an embodiment, the pulse width W2may be smaller than the pulse width W1. In an embodiment, the reductionin pulse width from W1 to W2 may be from a few nanoseconds to severalten nanoseconds, such as, for example, the reduction may be in the rangeof about 3 nanoseconds to about 60 nanoseconds, or in the range of about10 nanoseconds to about 40 nanoseconds, or in the range of about 20nanoseconds to about 30 nanoseconds. In an embodiment, a SET pulse mayinclude a high bias voltage coupled with an electrical pulse. In anembodiment, the pulse width of the SET pulse including a high biasvoltage coupled with an electrical pulse may have a pulse width W3. Inan embodiment, the pulse width W3 may be smaller than the pulse widthW2. In an embodiment, the pulse width W3 may also be smaller than thepulse width W1. In an embodiment, the reduction in pulse width from W2to W3 may be from a few nanoseconds to several ten nanoseconds, such as,for example, the reduction may be in the range of about 3 nanoseconds toabout 50 nanoseconds, or in the range of about 10 nanoseconds to about40 nanoseconds, or in the range of about 20 nanoseconds to about 30nanoseconds.

FIG. 4 shows the relation between PCRAM resistance and peak appliedvoltage V_(P) at different bias voltages according to an embodiment. Theshape of the curves is illustrative and not intended to be limiting.Applied voltage increases along a horizontal axis 402 and resistanceincreases along a vertical axis 404. To achieve a SET resistance R aconventional SET pulse including an electrical pulse, but not includinga bias voltage, may require an applied voltage V_(P1). In an embodiment,a SET pulse may include a low bias voltage coupled with an electricalpulse. In an embodiment, the applied voltage of the SET pulse includinga low bias voltage coupled with an electrical pulse may have a voltageV_(P2). In an embodiment, the applied voltage V_(P2) may be smaller thanthe applied voltage V_(P1). In an embodiment, the reduction in appliedvoltage from V_(P1) to V_(P2) may be 0.1 V to 1 V. For example, thedifference between V_(P1) and V_(P2) may be 0.1 V to 1 V, or 0.2 V to0.9 V, or 0.3 V to 0.8V, or 0.4 V to 0.7 V, or 0.5 V to 0.6 V. In anembodiment, a SET pulse may include a high bias voltage coupled with anelectrical pulse. In an embodiment, the applied voltage of the SET pulseincluding a high bias voltage coupled with an electrical pulse may havea voltage V_(P3). In an embodiment, the applied voltage V_(P3) may besmaller than the applied voltage V_(P2). In an embodiment, the appliedvoltage V_(P3) may also be smaller than the applied voltage V_(P1). Inan embodiment, the reduction in applied voltage from V_(P2) to V_(P3)may be 0.1 V to 1 V. For example, the difference between V_(P2) andV_(P3) may be 0.1 V to 1 V, or 0.2 V to 0.9 V, or 0.3 V to 0.8V, or 0.4V to 0.7 V, or 0.5 V to 0.6 V.

In an embodiment, the pulse width of a SET pulse may be varied byvarying the applied voltage of the SET pulse. In an embodiment, a firstSET pulse may include a first electrical pulse coupled with a first biaspulse. The first electrical pulse may have a first applied voltage, andthe first bias pulse may have a first bias voltage. In an embodiment, asecond SET pulse may include a second electrical pulse coupled with asecond bias pulse. The second electrical pulse may have a second appliedvoltage, and the second bias pulse may have a second bias voltage. In anembodiment, the second applied voltage may be greater than the firstapplied voltage, whilst the second bias voltage may be equal to thefirst bias voltage. In an embodiment, for the same bias voltage, ashorter pulse width may be achieved when a higher applied voltage isused. Consequently, the pulse width of the second SET pulse may besmaller than the pulse width of the first SET pulse. In an embodiment,the reduction in pulse width (i.e., the difference between the pulsewidths of the first and second SET pulses) may be from a few nanosecondsto several ten nanoseconds, such as, for example, the reduction may bein the range of about 2 nanoseconds to about 90 nanoseconds, or in therange of about 20 nanoseconds to about 70 nanoseconds, or in the rangeof about 40 nanoseconds to about 50 nanoseconds.

Similarly, in an embodiment, the applied voltage of a SET pulse may bevaried by varying the pulse width of the SET pulse. In an embodiment, afirst SET pulse may have a first pulse width and may include a firstelectrical pulse having a first applied voltage. In an embodiment, asecond SET pulse may have a second pulse width and may include a secondelectrical pulse having a second applied voltage. In an embodiment, thesecond pulse width may be greater than the first pulse width. In anembodiment, a lower applied voltage may be employed when the pulse widthincreases. Consequently, the second applied voltage may be lower thanthe first applied voltage. In an embodiment, the decrease in appliedvoltage could range from 0.1 V to a few volts, such as, for example, inthe range of about 0.1 V to about 9 V, or in the range of about 0.5 V toabout 7 V, or about 1 V to about 6 V, or about 3 V to about 4 V. Theseare exemplary examples, which should not limit use of the technology.

In an embodiment, a phase-change memory cell may be operated over morethan the two states used in binary operation. Since the structuralstates of a phase-change material may be continuously variable over arange of fractional crystallinities from 0% to 100%, a phase-changematerial may also be operated at resistance states between the lowestSET resistance and highest RESET resistance. Accordingly, multiple bitmemory operation over multiple memory states may be possible withphase-change memory cells.

Difficulties associated with multilevel phase-change operation includeresistance drift over time. Resistance drift may not be a problem inbinary operation of phase-change memory cells because the SET state mayshow little or no resistance drift, while the RESET state may showpronounced resistance drift. As a result, the resistance contrastbetween the SET and RESET states increases over time and no impairmentof performance may occur.

However, resistance drift is a major impediment in multilevelphase-change operation because time variations in resistance states maylead to confusion in the identification of memory states. This mayreduce the reliability and data retention in PCRAM. Accordingly, therealso exists a need for block or area erase in multilevel phase-changeoperation. This block or area erase of PCRAMS operating in themultilevel mode may be referred to as multilevel programming

In an embodiment, a SET pulse may include a single electrical pulse withshort duration and high voltage coupled with a DC bias pulse. In anembodiment, the SET pulse may control the crystallization processes anddrive all phase-change memory cells in PCRAM to a common SET state,regardless of the previous memory states of the phase-change memorycells.

In an embodiment, lower applied voltages may be achieved by varying theshape and/or duration of the SET pulse. In an embodiment, the loweramplitude SET pulse may be compatible with low voltage CMOS technology.In an embodiment, a bias pulse may be used to prevent quenching and/orthe re-amorphization of a phase-change material after a high voltageelectrical pulse is employed. In an embodiment, the SET pulse may enablemultilevel programming of the phase-change memory cell from the mediumrange resistance levels to a common lowest resistance SET level. In anembodiment, the SET pulse may improve the consistency of the SETresistance levels and achieve a better or larger sensing-margin. Longerlifetime may also be achieved as the SET pulse may also be used tore-initialize the PCRAM and prevent it from degradation after a highnumber of SET/RESET cycles.

FIG. 5 shows a SET pulse for multilevel programming according to anembodiment. The shape of the SET pulse 500 is illustrative and notintended to be limiting. Time increases along a horizontal axis 502 andvoltage increases along a vertical axis 504. In an embodiment, SET pulse500 may include an initial leading edge 520 and a plateau 521. In anembodiment, a sufficiently high bias voltage V_(B) may be employed toSET the PCRAM from the highest resistance level or from any otherresistance level greater than the lowest SET resistance level. In anembodiment, the range of the bias voltage V_(B) may be from 0.1 V to 0.3V. In an embodiment, the pulse duration T₅ may range from nanoseconds tomicroseconds, depending on phase-change material parameters such as, forexample, dimensions of the phase-change memory cell, the composition ofthe chalcogenide alloy of the phase-change material, the thresholdswitching voltage of the phase change memory cell, among other things.In an embodiment, the time duration T₅ may be in the range of about 1nanosecond to about 500 microseconds, or in the range of aboutnanoseconds to about 200 microseconds, or in the range of about 100nanoseconds to about 100 microseconds, or in the range of about 500nanoseconds to about 80 microseconds, or in the range of about 800nanoseconds to about 50 microseconds, or in the range of about 1microsecond to about 30 microseconds, or in the range of about 10microseconds to about 20 microseconds.

In an embodiment, the leading edge 522 and plateau 523 may result inheating of the phase-change material to a temperature above the glasstransition temperature. In an embodiment, the voltage V_(M) may besufficiently high and the pulse duration sufficiently long to SET thePCRAM from the highest resistance level or from any other resistancelevel greater than the lowest SET resistance level. In an embodiment,the voltage V_(M) may be in the range from 0.3 V to 10 V, such as, forexample, from 0.3 V to 10 V, or from 1 V to 9 V, or from 2 V to 8 V, orfrom 3 V to 7 V, or from 4 V to 6 V. In an embodiment, the pulseduration T₆ may be in the range from a few nanoseconds to several tennanoseconds, depending on phase-change material parameters such as, forexample, dimensions of the phase-change memory cell, the composition ofthe chalcogenide alloy of the phase-change material, the thresholdswitching voltage of the phase change memory cell, among other things.In an embodiment, the time duration T₆ may be in the range of about 1nanosecond to about 90 nanoseconds, or in the range of about 10nanoseconds to about 80 nanoseconds, or in the range of about 30nanoseconds to about 60 nanoseconds.

In an embodiment, the trailing/falling edge 524 may bring the amplitudeV_(M) down to the plateau 525 having the same level as or having adifferent level from the plateau 521. In an embodiment, anothertrailing/falling edge 526 may bring the amplitude of plateau 525 down tozero. In an embodiment, this may correspond to the heating of thephase-change material below the glass transition temperature. Similar tothe leading edge 520 and plateau 521, a high bias voltage for plateau525 and long heating time T₇ may be required to SET the PCRAM from thehighest resistance level. In an embodiment, the amplitude of plateau 525may be in the range of 0.1 V to 0.3 V. In an embodiment, the heatingtime T₇ could be from nanoseconds to microseconds, depending onphase-change material parameters such as, for example, dimensions of thephase-change memory cell, the composition of the chalcogenide alloy ofthe phase-change material, the threshold switching voltage of the phasechange memory cell, among other things. In an embodiment, the timeduration T₇ may be in the range of about 1 nanosecond to about 500microseconds, or in the range of about 50 nanoseconds to about 200microseconds, or in the range of about 100 nanoseconds to about 100microseconds, or in the range of about 500 nanoseconds to about 80microseconds, or in the range of about 800 nanoseconds to about 50microseconds, or in the range of about 1 microsecond to about 30microseconds, or in the range of about 10 microseconds to about 20microseconds.

FIG. 6 shows the correlation between PCRAM resistance states and biasvoltage according to an embodiment. The shape of the curves isillustrative and not intended to be limiting. Bias voltage along ahorizontal axis 602 and resistance increases along a vertical axis 604.In an embodiment, a bias voltage V_(B1) may be required to SET the PCRAMfrom a high resistance state to the SET resistance R_(S). In anembodiment, a bias voltage V_(B2) may be required to SET the PCRAM froma medium resistance state to the SET resistance R_(S). In an embodiment,a bias voltage V_(B3) may be required to SET the PCRAM from a lowresistance state to the SET resistance R_(S). In an embodiment, the biasvoltages V_(B1), V_(B2), and V_(B3) may be different, and each of thebias voltages V_(B1), V_(B2), and V_(B3) may depend on phase-changematerial parameters such as, for example, dimensions of the phase-changememory cell, the composition of the chalcogenide alloy of thephase-change material, among other things. In an embodiment, each ofbias voltages V_(B1), V_(B2), and V_(B3) may be in the range of 0.1 V to0.3 V.

FIG. 7 shows a multilevel programming cycle according to an embodiment.The shape of the pulses is illustrative and not intended to be limiting.In an embodiment, a single SET pulse may be used to switch the PCRAM tothe common lowest resistance SET level, regardless of the previous highresistance levels. In an embodiment, various SET pulses of varyingamplitudes and widths may be used to switch the PCRAM to the commonlowest resistance SET level.

In an embodiment, RESET pulses 701 and 703 with different pulseconditions may be used to RESET phase-change memory cells to a highresistance state HR or a medium resistance state MR. In an embodiment,the fractional crystallinity of the phase-change material in the mediumresistance state is higher than the fractional crystallinity of thephase-change material in the high resistance state. In an embodiment, asingle SET pulse 711 may be employed to switch the phase-change memorycells to a common SET level having lowest resistance LR, i.e., the SETstate, regardless of the previous resistance level of the phase-changememory cell. In an embodiment, the single SET pulse 711 may include asufficiently high bias pulse and a high amplitude electrical pulse. Inan embodiment, the single SET pulse 711 may enable the completecrystallization of the phase-change material from different resistancelevels.

In another embodiment, various SET pulses 721, 723 with differentvoltages and/or durations may be employed to switch the phase-changememory cells to a common SET level having lowest resistance, regardlessof the previous resistance level of the phase-change memory cell. In anembodiment, the various SET pulses may be employed for low power and/orhigh speed data transfer. In an embodiment, a SET pulse 721 with highvoltage and long duration may be required to SET the PCRAM from a highresistance state. In an embodiment, a SET pulse 723 with lower power andshorter duration pulse may be employed to SET the PCRAM from amedium-range resistance state. The above methods may ensure the completeSET programming of the PCRAM to the same low resistance level LR.

FIG. 8 shows a schematic diagram of a portion of a phase change memoryarray integrating with IC switches according to an embodiment. Theschematic diagram, including its components and the layout of itscomponents, is illustrative and not intended to be limiting. In anembodiment, a memory array 800 may include one or more resistive memorycells 804 a, 804 b. In an embodiment the memory array 800 may be furtherintegrated with IC switches 802 a, 802 b, 802 c, such as, for example,with transistors (including, but not limited to, MOSFETs, JFETs),diodes, among other alternatives that may serve the same function. In anembodiment, a programming circuit may be coupled with the one or moreresistive memory cells 804 a, 804 b of the memory array 800. Theprogramming circuit may be configured in use to provide a programmingsignal to the one or more resistive memory cells 804 a, 804 b to programthe one or more resistive memory cells 804 a, 804 b. In an embodiment,the IC switches 802 a, 802 b, 802 c may be used to select the resistivememory cell to be programmed. For example, when IC switch 802 a isswitched ON and IC switch 802 b is switched OFF, resistive memory cell804 a is selected for programming with the programming signal fromprogramming circuit, whilst resistive memory cell 804 b is unaffected bythe programming signal.

In an embodiment, the programming signal may include an electricalpulse, and a bias pulse coupled with the electrical pulse. In anembodiment, the electrical pulse may include an electrical pulseportion, and the bias pulse may include at least two bias pulseportions. In a further embodiment, the electrical pulse portion may bepositioned between the at least two bias pulse portions, wherein thebias pulse may include a voltage below a threshold switching voltage ofthe one or more resistive memory cells 804 a, 804 b. In an embodiment,the programming signal may include a peak voltage above the thresholdswitching voltage of the one or more resistive memory cells 804 a, 804b. In an embodiment, the one or more resistive memory cells 804 a, 804 bof the memory array 800 include one or more phase change memory cells.

In an embodiment, the programming signal may include an electrical pulseportion, and at least two bias pulse portions, the electrical pulseportion being positioned between the at least two bias pulse portions.In an embodiment, each of the at least two bias pulse portions mayinclude a respective voltage below a threshold switching voltage of theone or more resistive memory cells 804 a, 804 b. In an embodiment, theprogramming signal may include a peak voltage above the thresholdswitching voltage of the one or more resistive memory cells 804 a, 804b. In an embodiment, the one or more resistive memory cells 804 a, 804 bof the memory array 800 include one or more phase change memory cells.

FIG. 9 shows a block diagram of a phase change memory IC for memory chipimplementation according to an embodiment. In an embodiment, the phasechange memory IC may include control circuitry 902 configured togenerate a control signal 904. In an embodiment, the control signal 904may be a read control pulse (such that a read operation is performed ona phase change memory cell) or a write control pulse (such thatinformation is written into a phase change memory cell). In anembodiment, the control signal 904 may be transmitted to each of abiasing circuitry 906, a sense amplifier 908, a write driver 910, and anaddress circuitry 912. In an embodiment, the control circuitry 902 maybe configured to control the biasing circuitry 906 and the write driver910. The write driver 910 may be configured to provide a SET pulseand/or a RESET pulse. In an embodiment where the write driver 910 isconfigured to provide a SET pulse, the biasing circuitry 906 may beconfigured to generate a bias pulse 914, such as, for example, the biaspulse 103 in FIG. 1, or the bias pulses 221 and 225 of the SET pulse ofFIG. 2, or the bias pulses 521 and 525 of the SET pulse of FIG. 5. In anembodiment, the write driver 910 may be configured to generate therequired voltages 916 for the SET pulse, such as, for example, theamplitudes of each of plateaus 221, 223 and 225 of the SET pulse of FIG.2, or the amplitudes of each of the plateaus 521, 523 and 525 of the SETpulse of FIG. 5. In an embodiment where the write driver 910 isconfigured to provide a RESET pulse, the write driver 910 may beconfigured to generate the required voltages 916 for the RESET pulse,with or without the use of the bias pulses. With the RESET pulse, theresistive memory cells of the memory array 920 may be reset to a highresistance state.

In an embodiment, the control circuitry 902 may be configured to controlthe address circuitry 912 and the sense amplifier 908. In an embodiment,the address circuitry 912 may be configured to generate a logicaladdress 918, wherein the logical address 918 may be used to select oneor more resistive memory cells in a memory array 920 for programming. Inan embodiment, the logical address 918 may be generated by a differentcircuit or IC chip and consequently relayed to the address circuitry912. In an embodiment, the sense amplifier 908 may be configured tosense the signals 922 read on a bit-line when a read operation isperformed on the memory array 920. In an embodiment, the sense amplifier908 may be further configured to convert the small amplitude of thesignals 922 read on the bit-line to full range digital signals 924,i.e., the small signals 922 read on the bit-line are amplified.

In an embodiment, the memory array 920 may include a plurality ofresistive memory cells, such as, for example, a plurality of phasechange memory cells arranged in N rows and M columns, such as, forexample, the memory array 800 of FIG. 8 including a plurality ofresistive memory cells arranged in 2 rows and 3 columns. In anembodiment, a row decoder 926 may include an n-to-2^(n) decoder,configured to convert the logical address 918 to a row address selectline 928, wherein the row address select line 928 selects one row of theN rows of resistive memory cells included in the memory array 920. In anembodiment, a column decoder 932 may include an m-to-2^(m) decoder toconvert the logical address 918 to a column address select line 930,wherein the column address select line 930 selects one column of the Mcolumns of resistive memory cells included in the memory array 920. Forexample, if the column address select line 930 is configured to selectthe 3^(rd) column of a memory array 800 of FIG. 8 (wherein columnenumeration starts from the left) and the row address select line 928 isconfigured to select the 1^(st) row of the memory array 800 of FIG. 8(wherein row enumeration starts from the top), then select lines 930 and928 may result in IC switch 802 b being switched ON and thus, theselection of resistive memory cell 804 b. Accordingly, resistive memorycell 804 b may be read if the control signal 904 is a read controlpulse. Alternatively, resistive memory cell 804 b may be programmed (orwritten) if the control signal 904 is a write control pulse.Accordingly, the cooperating effects of the address circuitry 912 andthe sense amplifier 908 provide typical memory device functions oftenprovided by standard architecture.

Alternative pulse profiles corresponding to those described. In variousembodiments, these alternatives include all forms of modifications tothe bias voltage, applied voltage and/or pulse durations. In addition,the alternative pulses used may also be used to SET the PCRAM to thecommon lowest level SET resistance state from a higher resistance stateto the common low resistance level.

While the invention has been particularly shown and described withreference to specific example embodiments, it should be understood bythose skilled in the art that various changes in form and detail may bemade therein without departing from the spirit and scope of theinvention as defined by the appended claims. The elements of the variousembodiments may be incorporated into each of the other species to obtainthe benefits of those elements in combination with such other species,and the various beneficial features may be employed in embodiments aloneor in combination with each other. The scope of the invention is thusindicated by the appended claims and all changes which come within themeaning and range of equivalency of the claims are therefore intended tobe embraced.

1. A method for programming a resistive memory cell, the methodcomprising: providing a programming signal to the resistive memory cell,the programming signal comprising: an electrical pulse, and a bias pulsecoupled with the electrical pulse; wherein the electrical pulsecomprises an electrical pulse portion, and the bias pulse comprises atleast two bias pulse portions, the electrical pulse portion beingpositioned between the at least two bias pulse portions, wherein thebias pulse comprises a voltage below a threshold switching voltage ofthe resistive memory cell, and wherein the programming signal comprisesa peak voltage above the threshold switching voltage of the resistivememory cell.
 2. The method according to claim 1, wherein the resistivememory cell comprises a phase change memory cell.
 3. The methodaccording to claim 1, wherein providing the programming signal reducesthe resistance of the resistive memory cell to a level corresponding toa SET state of the resistive memory cell.
 4. The method according toclaim 1, wherein the threshold switching voltage is in the range fromabout 0.3 V to about 2 V.
 5. The method according to claim 4, whereinthe threshold switching voltage is in the range from about 0.4 V toabout 1 V.
 6. The method according to claim 5, wherein the thresholdswitching voltage is in the range from about 0.6 V to about 0.8 V. 7.The method according to claim 1, wherein the duration of the bias pulseis longer than the duration of the electrical pulse.
 8. The methodaccording to claim 1, wherein the duration of the bias pulse is in therange of nanoseconds to microseconds.
 9. The method according to claim1, wherein the duration of the electrical pulse is in the range fromabout 10 nanoseconds to about 1 microsecond.
 10. The method according toclaim 1, wherein the duration of the electrical pulse is in the rangefrom about 1 nanosecond to about 100 nanoseconds.
 11. The methodaccording to claim 1, wherein the resistive memory cell is a binarymemory cell.
 12. The method according to claim 1, wherein the resistivememory cell is a multilevel memory cell.
 13. The method according toclaim 12, wherein a first programming signal is provided for programmingthe multilevel memory cell in a first resistance level, and a secondprogramming signal is provided for programming the multilevel memorycell in a second resistance level, wherein the first resistance level isdifferent from the second resistance level.
 14. The method according toclaim 13, wherein the first resistance level and the second resistancelevel are different from a lowest resistance level of the multilevelmemory cell, wherein the lowest resistance level corresponds to the SETstate of the multilevel memory cell.
 15. The method according to claim12, wherein depending on the resistance level of the multilevel memorycell, various programming signals are provided for programming themultilevel memory cell, the various programming signals varying in oneor more of the following: voltage of the bias pulse, the peak voltage ofthe programming signal, the duration of the bias pulse, the duration ofthe electrical pulse.
 16. A method for programming one or more resistivememory cells in a resistive memory array, the method comprising:providing a programming signal to the one or more resistive memorycells, the programming signal comprising: an electrical pulse, and abias pulse coupled with the electrical pulse; wherein the electricalpulse comprises an electrical pulse portion, and the bias pulsecomprises at least two bias pulse portions, the electrical pulse portionbeing positioned between the at least two bias pulse portions, whereinthe bias pulse comprises a voltage below a threshold switching voltageof the one or more resistive memory cells, and wherein the programmingsignal comprises a peak voltage above the threshold switching voltage ofthe one or more resistive memory cells.
 17. The method according toclaim 16, wherein the one or more resistive memory cells comprise one ormore phase change memory cells.
 18. A method for programming a resistivememory cell, the method comprising: providing a programming signal tothe resistive memory cell, the programming signal comprising: anelectrical pulse portion, and at least two bias pulse portions, theelectrical pulse portion being positioned between the at least two biaspulse portions; wherein each of the at least two bias pulse portionscomprises a respective voltage below a threshold switching voltage ofthe resistive memory cell, and wherein the programming signal comprisesa peak voltage above the threshold switching voltage of the resistivememory cell.
 19. A memory apparatus comprising a memory array, thememory array comprising: one or more resistive memory cells; and aprogramming circuit coupled with the one or more resistive memory cellsand configured in use to provide a programming signal to the one or moreresistive memory cells to program the one or more resistive memorycells, the programming signal comprising: an electrical pulse, and abias pulse coupled with the electrical pulse; wherein the electricalpulse comprises an electrical pulse portion, and the bias pulsecomprises at least two bias pulse portions, the electrical pulse portionbeing positioned between the at least two bias pulse portions, whereinthe bias pulse comprises a voltage below a threshold switching voltageof the one or more resistive memory cells, and wherein the programmingsignal comprises a peak voltage above the threshold switching voltage ofthe one or more resistive memory cells.
 20. The memory apparatusaccording to claim 19, wherein the one or more resistive memory cellscomprise one or more phase change memory cells.
 21. A memory apparatuscomprising a memory array, the memory array comprising: one or moreresistive memory cells; and a programming circuit coupled with the oneor more resistive memory cells and configured in use to provide aprogramming signal to the one or more resistive memory cells to programthe one or more resistive memory cells, the programming signalcomprising: an electrical pulse portion, and at least two bias pulseportions, the electrical pulse portion being positioned between the atleast two bias pulse portions; wherein each of the at least two biaspulse portions comprises a respective voltage below a thresholdswitching voltage of the one or more resistive memory cells, and whereinthe programming signal comprises a peak voltage above the thresholdswitching voltage of the one or more resistive memory cells.
 22. Thememory apparatus according to claim 21, wherein the one or moreresistive memory cells comprise one or more phase change memory cells.